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PD- 94295B
IRGPS40B120U
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
C
Features
* Non Punch Through IGBT Technology. * 10s Short Circuit Capability. * Square RBSOA. * Positive VCE (on) Temperature Coefficient. * Super-247 Package.
VCES = 1200V VCE(on) typ. = 3.12V
G E
@ VGE = 15V,
N-channel
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Significantly Less Snubber Required * Excellent Current Sharing in Parallel Operation.
ICE = 40A, Tj=25C
Super-247TM
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
1200 80 40 160 160 20 595 238 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V
A V W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Le Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Internal Emitter Inductance (5mm from package)
Min.
--- --- --- 20 (2) --- ---
Typ.
--- 0.24 --- --- 6.0 (0.21) 13
Max.
0.20 --- 40 --- --- ---
Units
C/W
N(kgf) g (oz) nH
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1
1/28/04
IRGPS40B120U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 --- Temperature Coeff. of Breakdown Voltage --- 0.40 Collector-to-Emitter Saturation Voltage --- 3.12 --- 3.39 --- 3.88 --- 4.24 Gate Threshold Voltage 4.0 5.0 Temperature Coeff. of Threshold Voltage --- -12 Forward Transconductance --- 30.5 Zero Gate Voltage Collector Current --- --- --- 100 Gate-to-Emitter Leakage Current --- ---
Ref.Fig. Max. Units Conditions --- V VGE = 0V, IC = 500A --- V/C VGE = 0V, IC = 1.0mA, (25C-125C) 5, 6 3.40 IC = 40A VGE = 15V 7, 9 3.71 V IC = 50A 10 4.39 IC = 40A, TJ = 125C 4.79 IC = 50A, TJ = 125C 11 8, 9 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.0mA, (25C-125C) 10 ,11 --- S VCE = 50V, IC = 40A, PW=80s 500 A VGE = 0V, VCE = 1200V 1200 VGE = 0V, VCE = 1200V, TJ = 125C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions 510 IC = 40A 65 nC VCC = 600V 248 VGE = 15V 1750 J IC = 40A, VCC = 600V 2050 VGE = 15V,RG = 4.7, L =200H 3800 Ls = 150nH TJ = 25C 2300 TJ = 125C 2950 J Energy losses include "tail" and 5250 diode reverse recovery. 99 IC = 40A, VCC = 600V 55 VGE = 15V, RG = 4.7 L =200H 365 ns Ls = 150nH, T J = 125C 33 --- VGE = 0V --- pF VCC = 30V --- f = 1.0MHz TJ = 150C, IC = 160A, Vp =1200V FULL SQUARE VCC = 1000V, VGE = +15V to 0V RG = 4.7 TJ = 150C, Vp =1200V 10 --- --- s VCC = 900V, VGE = +15V to 0V, RG = 4.7 Typ. 340 43 165 1400 1650 3050 1950 2200 4150 76 39 332 25 4300 270 160
Ref.Fig.
17 CT1 CT4 WF1 WF2 12,14
13, 15 CT4 WF1 WF2 16
4
SCSOA
Short Circuit Safe Operting Area
CT3 WF4
2
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IRGPS40B120U
100 700 600 80 500
Ptot (W)
60
IC (A)
400 300 200
40
20 100 0 0 20 40 60 80 100 120 140 160 T C (C) 0 0 50 100 T C (C) 150 200
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
1000
1000
100
2 s 10 s
100
IC (A)
10
100 s 1ms
IC A)
10 1 10 100 1000 10000
1 DC
10ms
0.1 1 10 100 VCE (V) 1000 10000
VCE (V)
Fig. 3 - Forward SOA TC = 25C; TJS 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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3
IRGPS40B120U
120 100 80
ICE (A)
80
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
70 60 50 40 30 20
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
60 40 20
10
0 0 1 2 3 VCE (V) 4 5
0 0 2 VCE (V) 4 6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
500 450 400 350 300 250 200 150 T J = 25C T J = 125C
60
ICE (A)
40
20
100 50
TJ = 125C T J = 25C 0 5 10 VGE (V) 15 20
0 0 2 VCE (V) 4 6
0
Fig. 7 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
Fig. 8 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
4
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IRGPS40B120U
20 18 16 14
VCE (V) VCE (V)
20 18 16 14 ICE = 20A ICE = 40A ICE = 80A 12 10 8 6 4 2 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 20A ICE = 40A ICE = 80A
12 10 8 6 4 2 0
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14 12 10 8 6 4 2 5 10 VGE (V) 15 20 ICE = 20A ICE = 40A ICE = 80A
VCE (V)
Fig. 11 - Typical VCE vs. VGE TJ = 125C
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IRGPS40B120U
4500 4000 3500 3000
Energy (J)
1000
tdOFF
2500 2000 1500 1000 500 0 0 20 40 IC (A) 60 80
Swiching Time (ns)
EON EOFF
100
tdON tR tF
10 20 40 60 80
IC (A)
Fig. 12 - Typ. Energy Loss vs. IC TJ = 125C; L=200H; VCE= 600V RG= 4.7; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC TJ = 125C; L=200H; VCE= 600V RG= 4.7; VGE= 15V
5000 4500 4000 3500
1000
tdOFF EOFF
3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25
EON
Swiching Time (ns)
Energy (J)
100
td ON tR tF
10 0 5 10 15 20 25
RG ()
RG ()
Fig. 14 - Typ. Energy Loss vs. RG TJ = 125C; L=200H; VCE= 600V ICE= 40A; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG TJ = 125C; L=200H; VCE= 600V ICE= 40A; VGE= 15V
6
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IRGPS40B120U
10000
16
Cies
14 12 600V 800V
Capacitance (pF)
1000
10
Coes Cres
100
VGE (V)
8 6 4 2
10 0 20 40 60 80 100
0 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC)
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 17 - Typical Gate Charge vs. VGE ICE = 40A; L = 600H
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20
0.1
0.10 0.05 0.01 0.02 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 0.001 0.01
0.01 1E-005 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 18. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGPS40B120U
L
L VCC
0
80 V Rg
DUT 1K
DUT
1000V
Fig.C.T.1 - Gate Charge Circuit (turn-on)
Fig.C.T.2 - RBSOA Circuit
DRIVER
DC
DIODE CLAMP
L
900V
DUT / DRIVER
Rg
DUT
VCC
Fig.C.T.3 - S.C. SOA Circuit
VCC ICM
Fig.C.T.4 - Switching Loss Circuit
R=
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
8
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IRGPS40B120U
Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125C using Fig. CT.4 1100 1000 900 800 700 VCE (V) 600 ICE (A) 500 400 300 200 100 0 -100 -0.20 0.00
Eoff Loss 5% ICE 90% ICE
Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125C using Fig. CT.4 900 800 90 80 70 60
TEST CURRENT
50
40
700 600 500
30
VCE (V)
50
90% test current 10% test current
20
400 300 200 100 0
40 30
5% V CE
10
5% V CE
20 10 0 -10 4.60
0
0.20
0.40
0.60
-10 0.80
-100 4.10
4.20
4.30
4.40
4.50
Time(s)
Time (s)
Fig. WF.3 - Typ. S.C. Waveform @ TC=150C using Fig. CT.3 1000 900 VCE 800 700 600 VCE (V) 500 400 300 200 100 0 -5.00 ICE 400 350 300 250 200 150 100 50 0 15.00 ICE (A) 500 450
0.00
5.00 time (S)
10.00
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ICE (A)
tf
IRGPS40B120U
Super-247TM Package Outline
0.13 [.005] 16.10 [.632] 15.10 [.595] A 5.50 [.216] 4.50 [.178] 0.25 [.010] 13.90 [.547] 13.30 [.524] BA 2X R 3.00 [.118] 2.00 [.079] 2.15 [.084] 1.45 [.058]
1.30 [.051] 0.70 [.028] 20.80 [.818] 19.80 [.780] 4 16.10 [.633] 15.50 [.611] 4
C 1 2 3 B 14.80 [.582] 13.80 [.544] O 1.60 [.063] MAX. E E
4.25 [.167] 3.85 [.152]
5.45 [.215] 2X
3X
1.60 [.062] 1.45 [.058] BA
3X
1.30 [.051] 1.10 [.044]
0.25 [.010]
SECT ION E-E NOT ES: 1. DIMENS IONING AND T OLERANCING PER AS ME Y14.5M-1994. 2. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ] 3. CONT ROLLING DIMENS ION: MILLIMET ER 4. OUT LINE CONFORMS T O JEDEC OUT LINE T O-274AA
2.35 [.092] 1.65 [.065]
LEAD ASS IGNMENT S MOSFET 1 - GAT E 2 - DRAIN 3 - S OURCE 4 - DRAIN IGBT 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR
Super-247TM Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE A8B9 INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
IRFPS37N50A
PART NUMBER
A8B9
0020
DATE CODE (YYWW) YY = YEAR WW = WEEK
TOP Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/04
10
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